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  • 姓名: 项金娟
  • 性别: 女
  • 职称: 副研究员
  • 职务: 
  • 学历: 博士
  • 电话: 010-82995563
  • 传真: 
  • 电子邮件: xiangjinjuan@ime.ac.cn
  • 所属部门: 集成电路先导工艺研发中心
  • 通讯地址: 北京市朝阳区北土城西路3号

    简  历:

  • 教育背景

    2000.09-2004.7 哈尔滨理工大学 本科

    2004.9-2007.4 哈尔滨理工大学 硕士

    2013.9-2016.7 中国科学院大学 博士

    工作简历

    2007.04-2009.6 中国科学院沈阳科仪公司

    2009.8-今 中国科学院微电子研究所

    社会任职:

    研究方向:

  • ALD工艺研究

    承担科研项目情况:

    代表论著:

  • 1. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Jianfeng Gao, Kai Han, Jiahan Yu, Wenwu Wang, Junfeng Li, and Chao Zhao, “Investigation of Thermal Atomic Layer Deposited TaAlC with Low EffectiveWork-Function on HfO2 Dielectric Using TaCl5 and TEA as Precursors”, ECS Journal of Solid State Science and Technology, 6 (1) P38-P41 (2017).

    2. Jinjuan Xiang, Tingting Li, Xiaolei Wang, Liyong Du, Yuqiang Ding, Wenwu Wang, Junfeng Li, Chao Zhao, “Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors”, ECS Journal of Solid State Science and Technology, 5 (10) P633-P636 (2016).

    3. Jinjuan Xiang, Yanbo Zhang, Tingting Li, Xiaolei Wang, Jianfeng Gao, Huaxiang Yin, Junfeng Li, Wenwu Wang, Yuqiang Ding, Chongying Xu, Chao Zhao, “Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate”, Solid-State Electronics,122 P64-69 (2016).

    4. Jinjuan Xiang, Tingting Li, Xiaolei Wang, Kai Han, Junfeng Li, Chao Zhao, “Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks”, ECS Journal of Solid State Science and Technology, 5 (6) P327-P329 (2016).

    5. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Chongying Xu, Tingting Li, Xiaolei Wang, Junfeng Li, Chao Zhao, “Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors”, ECS Journal of Solid State Science and Technology, 5 (5) P299-P303 (2016).

    6. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Junfeng Li, Wenwu Wang, Chao Zhao, "Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors” Chin. Phys. B, 25(3) 037308 (2016).

    7. Jinjuan Xiang, Tingting Li, Yanbo Zhang, Xiaolei Wang, Jianfeng Gao, Hushan Cui, Huaxiang Yin, Junfeng Li, Wenwu Wang, Yuqiang Ding, Chongying Xu, Chao Zhao, "Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET," ECS Journal of Solid State Science and Technology, 4 (12) P441-P444 (2015)

    8. Jinjuan Xiang, Guilei Wang, Tingting Li, Hushan Cui, Xiaolei Wang, Gaobo Xu, Junfeng Li, Wenwu Wang, and Chao Zhao, ”Effect of Precursor Entrance Sequence during Atomic Layer Deposition on the Al2O3/Ge Interface by X-ray Photoelectron Spectroscopy”, ECS Transactions, 58 (7) 153-158 (2013).

    9. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Chao Zhao, Wenwu Wang, Junfeng Li, Qingqing Liang, Dapeng Chen and Tianchun Ye, “Band Lineup Issues Related with High-k/SiO2/Si Stack”, ECS Transactions, 50 (4) 293-298 (2012) .

    10. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Tingting Li, Xiaolei Wang, Junfeng Li, Chao Zhao, “Thermal atomic layer deposition of low workfunction metal TiAlC for FinFET device”, ALD 2016, Dublin, Ireland (2016).

    11. Jinjuan Xiang, Yanbo Zhang, Jianfeng Gao, Tingting Li, Huaxiang Yin, Junfeng Li, Chao Zhao, “Atomic Layer Deposited TiAlC Film as Metal Gate for 22 nm Node CMOS Technology and Beyond”, ALD 2015, Portland, USA (2015)

    12. Jinjuan Xiang, Yuqiang Ding, Chongying Xu, Liyong Du, Xiaolei Wang,Junfeng Li, and Chao Zhao, “Investigation on atomic layer deposition of N type work-function metal for 14nm FinFETs and beyond”, IUMRS-ICA 2016, Qingdao, China. Invited Talk.

    13. 项金娟,赵超,“用于体硅FinFET器件的单原子层N型金属TiAlC的研究” CMRS 2015,贵阳,邀请报告。

    专利申请:

  • 1. 项金娟,王文武,后栅工艺中金属栅的制作方法,中国,201010500383。

    2. 项金娟,赵超,半导体器件制造方法,2014103539451。

    3. 项金娟,赵超,半导体器件制造方法,2014103512088。

    获奖及荣誉:

  • 中国科学院微电子研究所“优秀员工”