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  • 姓名: 陶科
  • 性别: 男
  • 职称: 副研究员
  • 职务: 
  • 学历: 
  • 电话: 18518673628, 010-82995805
  • 传真: 
  • 电子邮件: taoke@ime.ac.cn
  • 所属部门: 高频高压中心
  • 通讯地址: 北京市朝阳区北土城西路3号

    简  历:

  • 教育背景:

    2014年8月至今,中国科学院微电子研究所 副研究员 

    20117月至20148月,日本东京工业大学像情报工学研究所 博士后研究员 

    200810月~20116月,南开大学信息技术科学院微电子学与固体电子学专业   博士学位 

    20059月~20087月,南开大学信息技术科学院微电子学与固体电子学专业   硕士学位 

    20019月~20057月,南开大学数学科学学院信息与计算科学专业   学士学位 

    社会任职:

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    研究方向:

  • 高效晶体硅太阳电池、硅基光电子器件

    承担科研项目情况:

  • 1、国家自然科学基金面上项目:基于低温原位掺杂技术的大面积硅漂移探测器研究,2021.1~2024.126207416559万元,主持,在研; 

    2、国家重点研发计划:电池PN结形成方式和特性对电池效率及稳定性的影响,2020.112023.10, 2020YFB1506503181.4万元,参与(子课题负责人),在研; 

    3、北京市自然科学基金面上项目:基于隧穿氧化物钝化接触技术的硅漂移探测器研究,2019.12021.1220万元,主持,在研; 

    4、国家重点研发计划:柔性铜铟镓硒薄膜太阳能电池和组件的成套技术研发,2019.12022.12 2018YFB150020091万元,参与(子课题负责人),在研; 

    5、国家自然科学基金青年项目:基于隧穿氧化物钝化接触(TOPCon)技术的叉指背接触(IBC)晶体硅太阳电池的研究,2018.12020.125170235525万元,主持,结题; 

    6、北京市科学技术委员会:碳纳米材料太阳能电池研究,2015.7--2017.7, 350万元,参与,结题。 

    代表论著:

  • [1]   Ke Tao, Jin Wang, Shuai Jiang, Rui Jia, Zhi Jin, Xinyu Lin, High quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by two-step approach, CrystEngComm, 21 (2019) 6623–6629 

    [2]   Ke Tao, Shuai Jiang, Rui Jia, Ying Zhou, Pengfei Zhang, Xiaowan Dai, Hengchao Sun, Zhi Jin, Xinyu Liu, The impact of indium tin oxide deposition and post annealing on the passivation property of TOPCon solar cellsSolar Energy, 176 (2018) 241–247 

    [3]   Ke Tao, Qiang Li, Caixia Hou, Shuai Jiang, Jin Wang, Rui Jia, Yun Sun, Yongtao Li, Zhi Jin, Xinyu Liu, Application of a-Si/μc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells, Solar Energy, 144 (2017) 735~739.  

    [4]   Ke Tao, Jin Wang, Rui Jia, Yun Sun, Zhi Jin, Xinyu Liu, Ultralow temperature epitaxial growth of silicon-germanium thin films on Si(001) using GeF4, Diamond and Related Materials, 68 (2016) 138~142  

    [5]   Ke Tao, Jin Wang, Yun Sun, Rui Jia, Zhi Jin, Xinyu Liu, A novel method for in situ growing Ge-rich polycrystalline SiGe thin films on glass at low temperature, Scripta Materialia, 107 (2015) 100-102.  

    [6]   Ke Tao, Jin Wang, Yun Sun, Rui Jia, Zhi Jin, In-situ phosphorous-doped SiGe layer on Si substrate by reactive thermal chemical vapor deposition at low temperature, Materials Science in Semiconductor Processing, 38 (2015) 137-141.  

    [7]   Zhiyu Xu, Ke Tao*, Shuai Jiang, Rui Jia, et al., Application of polycrystalline silicon carbide thin films as the passivating contacts for silicon solar cells, Solar Energy Materials and Solar Cells 206 (2020) 110329   

    [8]   Yiqing Wu, Ke Tao*, Surface passivation in n-type silicon and its application in silicon drift detector, Chin. Phys. B, 29 (2020) 037702 

    [9]   Li, Xinpu, Zhibo Gao, Danni Zhang, Ke Tao*, et al., High-efficiency multi-crystalline black silicon solar cells achieved by additive assisted Ag-MACE. Solar Energy, 170 (2020) 176-184. 

    [10]  Li, Xinpu, Ke Tao*, et al., Development of additive-assisted Ag-MACE for multi-crystalline black Si solar cells. Electrochemistry Communications 113 (2020) 106686 

    [11]  Li, Xinpu, Ke Tao*, et al., Improvement of saw damage removal to fabricate uniform black silicon nanostructure on large-area multi-crystalline silicon wafers. Solar Energy 204 (2020) 577–584 

    [12]  Ying Zhou, Ke Tao*, et al.,The impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell, Current Applied Physics 20 (2020) 911–916 

    [13]  Ying Zhou, Ke Tao*, et al., Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion, Superlattices and Microstructures 148 (2020) 106720 

    [14]  Ying Zhou, Ke Tao*, et al.,Study of boron diffusion for p + emitter of large area N?type TOPCon silicon solar cells, Applied Physics A, 126 (2020) 671 

    [15]  Jianhui Bao, Ke Tao*, et al., The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells, Chin. Phys. B 28 (2019): 098201  

    [16]   Sai Liu, Yuming Xue, Rui Jia, Ke Tao*, et al., Design and preparation of integrated voltage divider for silicon drift detector by ion implantation, Journal of Materials Science: Materials in Electronics 30 (2019) 10152  

    [17]   Pengfei Zhang, Rui Jia, Ke Tao, et al., The influence of Ag-ion concentration on the performance of mc-Si silicon solar cells textured by metal assisted chemical etching (MACE) method, Solar Energy Materials and Solar Cells 200 (2019) 109983   

    [18]   Guoyu Su, Xiaowan Dai, Ke Tao, et al., The study of the defect removal etching of black silicon for diamond wire sawn multi-crystalline silicon solar cells, Solar Energy 170 (2018) 95–101 

    [19]   Guoyu Su, Rui Jia, Xiaowan Dai, Ke Tao, et al., The Influence of Black Silicon Morphology Modification by Acid Etching to the Properties of Diamond Wire Sawn Multicrystalline Silicon Solar Cells, IEEE Journal of Photovoltaics 8 (2018) 937-942 

    [20]   Xiaowan Dai, Rui Jia, Guoyu Su, Hengchao Sun, Ke Tao, et al., The influence of surface structure on diffusion and passivation in multicrystalline silicon solar cells textured by metal assisted chemical etching (MACE) method, Solar Energy Materials and Solar Cells 186 (2018) 42-49 

    [21]   Qiang Li, Ke Tao, Yun Sun, Rui Jia, Shao-Meng Wang, Zhi Jin, Xin-Yu Liu, Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells, Solar Energy, 135 (2016) 487~492.  

    专利申请:

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    获奖及荣誉:

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