| 论文编号: | 172511O120100143 |
| 第一作者所在部门: | 一室一组 |
| 论文题目: | 深亚微米部分耗尽绝缘体上硅MOS晶体管中热阻的提取方法 |
| 论文题目英文: | |
| 作者: | 毕津顺 |
| 论文出处: | EI收录 |
| 刊物名称: | International Conference on Microelectronics and Nanotechnology |
| 年: | 2010 |
| 卷: | |
| 期: | |
| 页: | |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 0.284 |
| 摘要: | Deep submicron partially depleted silicon-on-insulator (PDSOI) MOSFETs with H-gate structure were fabricated at the 0.35μm SOI CMOS baseline in Institute of Microelectronics of the Chinese Academy of Sciences. Self-heating effect (SHE) is critical in SOI MOSFETs, accurate and simple extractions of thermal resistance (Rth) were done for IC simulation by using the body-source diode as the thermometer. The results demonstrate that the thermal resistance in SOI PMOSFET NMOSFET is lower than that in SOI NMOSFETsPMOSFET; and the thermal resistance in long channel SOI NMOSFET is lower than that in short channel counterparts. It offers a great help to the SHE modeling and SPICE parameters extraction. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | |
科研产出