| 论文编号: | 172511O120100179 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | High Performance Silicon Nanowire Gate-all-around nMOSFETs Fabricated on Bulk Substrate Using CMOS-compatible Process |
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| 作者: | 宋毅 |
| 论文出处: | SCI收录 |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2010 |
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| 影响因子: | 2.605 |
| 摘要: | In this paper, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has been proposed. The fabricated SNWFET featuring 33 nm gate length and 7 nm diameter shows the highest driving current (Ion=2500 μA/μm at Vds=Vgs=1.0 V) among previously reported data and achieves high Ion/Ioff ratio of 105, lightening the promise for high performance and strong scalability of GAA SNWFETs. The process details and optimization procedure are extensively discussed. |
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