| 论文编号: | 172511O120100218 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | 自整流二氧化锆基存储单元的一次编程存储器应用 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2010 |
| 卷: | 31 |
| 期: | 4 |
| 页: | 344-346 |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 2.605 |
| 摘要: | A memory cell based on n+？Si/ZrO2/Pt structure with self-rectifying properties is demonstrated for write-onceread- many-times (WORM)memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 104. The memory devices show a large on/off ratio of about 106 and narrow resistance distributions before and after programming. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | |
科研产出