| 论文编号: | 172511O120100259 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | 基于Au纳米晶埋层的ZrO2薄膜的自整流阻变存储器的交叉阵列存储应用 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | EI收录 |
| 刊物名称: | IEEE INEC |
| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | The self-rectifying resistive switching behavior is investigated in the Au/ZrO2: nc-Au/n+ Si sandwich structure with the Au nanocrystals embedded ZrO2 films (ZrO2: nc-Au) fabricated by e-beam evaporation. The rectification ratio is obtained to be 7×102 under ±0.5 V at low-resistance state (LRS), which can alleviate the cross talk effect in crossbar structure arrays without additional switching elements. The different current conduction mechanisms at LRS are studied. |
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| 备注: | IEEE International NanoElectronics Conference |
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