| 论文编号: | 172511O120120314 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | |
| 论文题目英文: | |
| 作者: | 金智 |
| 论文出处: | |
| 刊物名称: | Chinese Physics Letters |
| 年: | 2012 |
| 卷: | 29 |
| 期: | 5 |
| 页: | 57302 |
| 联系作者: | 金智 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n- and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V·s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 μm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications |
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| 备注: | SCI收录 |
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