| 论文编号: | 172511O120120181 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | Ni/Pt/Au源漏欧姆接触的GaSb p型场效应晶体管 |
| 论文题目英文: | |
| 作者: | 刘洪刚 |
| 论文出处: | |
| 刊物名称: | Chinese Physics Letters |
| 年: | 2012 |
| 卷: | |
| 期: | 12 |
| 页: | 127303-1 |
| 联系作者: | 刘洪刚 |
| 收录类别: | |
| 影响因子: | 0.1797 |
| 摘要: | GaSb is an attractive candidate for future high-performance III–V p-channel metal-oxide-semiconductor-field-effect-transistors (pMOSFETs) because of its high hole mobility. The effect of HCl based-chemical cleaning on removing the non-self limiting and instable native oxide layer of GaSb to obtain a clean and smooth surface has been studied. It is observed that the rms roughness of a GaSb surface is significantly reduced from 2.731nm to 0.693nm by using HCl:H2O (1:3) solution. The Ni/Pt/Au ohmic contact exhibits an optimal specific contact resistivity of about 6.89×10？7Ω·cm2with a 60s rapid thermal anneal (RTA) at 250°C. Based on the chemical cleaning and ohmic contact experimental results, inversion-channel enhancement GaSb pMOSFETs are demon- cleaning and ohmic contact experimental results, inversion-channel enhancement GaSb pMOSFETs are demon-on-off (ION/IOFF) ratio of >103, and a subthreshold swing of ～250mV/decade are achieved. Combined with on-off (ION/IOFF) ratio of >103, and a subthreshold swing of ～250mV/decade are achieved. Combined with22 pMOSFET. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
科研产出