| 论文编号: | 172511O120120171 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | 硫化铵处理对锗表面的MOS器件的性能影响 |
| 论文题目英文: | |
| 作者: | 刘洪刚 |
| 论文出处: | |
| 刊物名称: | Chinese Physics Letter |
| 年: | 2012 |
| 卷: | 4 |
| 期: | 2012 |
| 页: | 046801-1 |
| 联系作者: | 刘洪刚 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al2O3/Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability basedoncapacitance-voltagecharacterizations. ThesampleswithHClpre-cleaningand(NH4)2Spassivationshow less frequency dispersion than the HF pre-cleaning and (NH4)2S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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