| 论文编号: | 172511O120120142 |
| 第一作者所在部门: | 四室 |
| 论文题目: | Ku波段氮化镓功率HEMT的三维电磁场仿真设计 |
| 论文题目英文: | |
| 作者: | 戈勤 |
| 论文出处: | |
| 刊物名称: | 会议论文 |
| 年: | 2012 |
| 卷: | |
| 期: | 0 |
| 页: | 0 |
| 联系作者: | 戈勤 |
| 收录类别: | |
| 影响因子: | 3.399 |
| 摘要: | An internally matched GaN power HEMT has been realized at Ku band with a newly developed three-dimensional (3D) electromagnetic (EM) design technique, in which the internal matching networks are 3D modeled and characterized, as a whole. This single chip device with 4mm gate width delivers 17.8W power output with more than 30% PAE over 13.8 to 14.3GHz with few adjustments after assembling. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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