| 论文编号: | 172511O120120114 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 姚湲 |
| 论文出处: | |
| 刊物名称: | APPLIED PHYSICS LETTERS |
| 年: | 2012 |
| 卷: | |
| 期: | 99 |
| 页: | 163506-1 |
| 联系作者: | 姚湲 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | The electrostatic potential of the thin high-j dielectric film and related interfaces embedded in the gate stack can be profiled in high spatial resolution in the wedge-shape sample. The retrieved potential uncovers the uneven distribution with a maximum 15.660.7V in HfLaON dielectric film. It implies the non-uniform material distribution in high-j thin film and physical parameter of the film, such as permittivity, should not be considered as the constant. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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