| 论文编号: | 172511O120120322 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 项金娟 |
| 论文出处: | |
| 刊物名称: | 222nd ECS Meeting, Hawaii, USA (2012). Oral Presentation. |
| 年: | 2012 |
| 卷: | |
| 期: | 2012 |
| 页: | Meet. Abstr. 2012 MA2012-02 2618 |
| 联系作者: | 项金娟 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Band lineup of high-k dielectrics such as ALD grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The valence band offsets (VBO) at HfO2/SiO2, Al2O3/SiO2 and SiO2/Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO2/Si stack. The experimental results are successfully interpreted and attributed to lower CNLs of HfO2 and Al2O3 related to that of SiO2/Si stack, indicating feasibility of gap state based theory in investigating band alignment of oxide/semiconductor and oxide/oxide heterojunctions. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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