| 论文编号: | 172511O120120081 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 吴昊 |
| 论文出处: | |
| 刊物名称: | Proc. of SISPAD |
| 年: | 2012 |
| 卷: | |
| 期: | 2012 |
| 页: | 404 |
| 联系作者: | 吴昊 |
| 收录类别: | |
| 影响因子: | 2.544 |
| 摘要: | In this paper, the effects of dopant distribution in substrate/ back-gate, back bias and metal gate work-function on performance and Vt roll-off of Extremely-Thin Silicon-On-Insulator (ETSOI) MOSFETs with Ultra-Thin Buried OXide (UTBOX) (ES-UB- MOSFETs) were simulated and studied. Lateral Non-uniform Dopant Distribution (LNDD) in substrate was used to enhance scaling capability and improve Vt controllability for ES-UB- MOSFETs. Process and device simulations were conducted to demonstrate the importance of substrate dopant engineering and to search the optimization design conditions for ES-UB-MOSFETs. Fixing long channel Vt at ±0.3V for ES-UB-MOSFETs, LNDD enables gate length to be scaled to 20nm for both n- and p-MOS, which is ~ 10% smaller than that of the ES-UB-MOSFETs with lateral uniform doping in substrate. A novel process flow to form LNDD was proposed and simulated. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | ISTP收录 |
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