| 论文编号: | 172511O120130241 |
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| 作者: | 刘明 |
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| 刊物名称: | nanoscale |
| 年: | 2013-05-01 |
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| 期: | 5 |
| 页: | 4785 |
| 联系作者: | 刘明 |
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| 摘要: | Different from conventional unipolar-type 1D–1R RRAM devices, a bipolar-type 1D–1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D–1R memory device not only achieves self-compliance resistive switching aracteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications. |
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