| 论文编号: | 172511O120130188 |
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| 作者: | 罗军 |
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| 刊物名称: | Vacuum |
| 年: | 2013-09-01 |
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| 期: | 101 |
| 页: | 184 |
| 联系作者: | 罗军 |
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| 摘要: | Trimethylaluminum (TMAl) pre-seeding time, an important factor in controlling the quality such as morphology and dislocation of AlN on Si(111) substrate, was systematically investigated. It was revealed that different TMAl pre-seeding time indeed lead to substantially different AlN quality in terms of morphology and threading dislocations. For the optimized TMAl pre-seeding time 40 s in this work, the interface between AlN and Si(111) substrate without an amorphous layer was evidenced which is believed to be beneficial for growing high-quality AlN. A mechanism is proposed to explain the effect of the TMAl pre-seeding on AlN epitaxy on Si(111) substrate. |
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科研产出