| 论文编号: | 172511O120130186 |
| 第一作者所在部门: | |
| 论文题目: | 低功耗体硅FinFETs器件沟道及源漏扩展区掺杂形貌优化 |
| 论文题目英文: | |
| 作者: | 尹海洲 |
| 论文出处: | |
| 刊物名称: | 第六届中国微纳电子技术交流与学术研讨会 |
| 年: | 2013-11-15 |
| 卷: | |
| 期: | 1 |
| 页: | 3 |
| 联系作者: | 尹海洲 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Subthreshold leakage, punch-through leakage and band to band tunneling(BTBT) leakage are the main components of off-state leakage in extremely scaled bulk FinFETs. This paper has studied low off-state leakage of bulk nFinFETs with optimized channel and source/drain extension doping profile by using 3-D process and device simulations. Punch-through stop layer (PTSL) has been carefully designed to lower subthreshold leakage, punch-through leakage and BTBT leakage. Effects of source/drain extension doping profile on off-state leakage were also investigated. The proposed nFinFET with superior short channel control, <65mV/dec subthreshold slope and <20mV/V DIBL, exhibits extremely low off-state leakage, <30pA/um. |
| 英文摘要: | |
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