| 论文编号: | 172511O120130185 |
| 第一作者所在部门: | |
| 论文题目: | 100 GHz InP基转移电子器件的研制 |
| 论文题目英文: | |
| 作者: | 贾锐 |
| 论文出处: | |
| 刊物名称: | Advanced Materials Research |
| 年: | 2013-05-12 |
| 卷: | |
| 期: | 684 |
| 页: | 299 |
| 联系作者: | 贾锐 |
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| 影响因子: | |
| 摘要: | This paper reports on the development of InP transferred-electron-device sources in mainland of China for operation at 100 GHz or so. Using n+-n-n+ structures with graded doping profiles, oscillations were obtained at 101.8 GHz from a 1 μm structure with an n doping increasing linearly from 1.0×10-6 to 3.0×10-6 cm-3. Its CW RF output power was speculated to be several milliwatt and these results are believed to correspond to a fundamental mode operation. This result is attributed to a processing technique based on the use of etch-stop layers, removal of substrate and a large number of ohmic contact experiments. |
| 英文摘要: | |
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