| 论文编号: | 172511O120130161 |
| 第一作者所在部门: | |
| 论文题目: | NA |
| 论文题目英文: | |
| 作者: | 罗军 |
| 论文出处: | |
| 刊物名称: | Applied Physics Letters |
| 年: | 2013-05-01 |
| 卷: | |
| 期: | 102 |
| 页: | 122114-1-4 |
| 联系作者: | 罗军 |
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| 摘要: | Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2and up to 0.33 nm/min for As at 370 C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540C |
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