| 论文编号: | 172511O120130148 |
| 第一作者所在部门: | |
| 论文题目: | NA |
| 论文题目英文: | |
| 作者: | 罗军 |
| 论文出处: | |
| 刊物名称: | Microelectronic engineering |
| 年: | 2013-09-01 |
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| 期: | 23 |
| 页: | 1 |
| 联系作者: | 罗军 |
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| 摘要: | In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 10 15cm 2 in practical application in accordance with the results achieved in this work. |
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科研产出