| 论文编号: | 172511O120130122 |
| 第一作者所在部门: | |
| 论文题目: | 基于粗糙多晶硅和侧墙工艺的高红外吸收纳米柱森林结构制备方法 |
| 论文题目英文: | |
| 作者: | 毛海央 |
| 论文出处: | |
| 刊物名称: | J. Micromech. Microeng |
| 年: | 2013-08-23 |
| 卷: | |
| 期: | 23 |
| 页: | 95033 |
| 联系作者: | 毛海央 |
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| 影响因子: | |
| 摘要: | Nanopillar forests with high infrared (IR) absorptance are fabricated based on a highly flexible, controllable and micro-fabrication compatible parallel approach. The key technique of the approach is using rough surfaces of Poly-Si films as support structures in Spacer Technology. In a wavelength region of 1.5-5 ？m, IR absorptance of the large-area nanopillar forests reaches a minimum of 95%, which is much higher than that of Poly-Si films and Si3N4-based IR absorbers. As the approach is compatible with conventional micro-fabrication process, the nanopillar forests can be photo-patterned and generated on microstructures or devices. It is expected that the nanopillar forests can be employed as absorbers in MEMS IR sensors to improve performance. |
| 英文摘要: | |
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