| 论文编号: | 172511O120130116 |
| 第一作者所在部门: | |
| 论文题目: | NA |
| 论文题目英文: | |
| 作者: | 许高博 |
| 论文出处: | |
| 刊物名称: | Chinese Physcs Letters |
| 年: | 2013-08-09 |
| 卷: | 30 |
| 期: | 8 |
| 页: | 087303-1 |
| 联系作者: | 许高博 |
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| 摘要: | We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process. In the process, SiO2/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation. Because of the high-？？/metalgate stack formation after the 1000℃ source/drain ion-implant doping activation, the fabricated PMOSFET has good electrical characteristics. The device’s saturation driving current is 2.71×10？4A/μm (VGS =VDS = ？1.5 V) and the off-state current is 2.78 × 10？9A/μm. The subthreshold slope of 105mV/dec (VDS = ？1.5 V), drain induced barrier lowering of 80mV/V and Vth of ？0.3V are obtained. The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications. |
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