| 论文编号: | 172511O120130103 |
| 第一作者所在部门: | |
| 论文题目: | NA |
| 论文题目英文: | |
| 作者: | 蒋文静 |
| 论文出处: | |
| 刊物名称: | JOURNAL OF MICROMECHANICS AND MICROENGINEERING |
| 年: | 2013-03-29 |
| 卷: | |
| 期: | 23 |
| 页: | 65004 |
| 联系作者: | 蒋文静 |
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| 摘要: | A new concept for uncooled infrared (IR) imaging with a high fill-factor SOI diode structure has been proposed. This approach has the potential of reaching a noise equivalent temperature difference (NETD) in the milli-Kelvin range. This detector makes the IR absorbing structure cover almost the entire pixel area, in which the fill factor can reach 80%. Using the multilever structure, thermal isolation can be independently optimized without sacrificing the IR absorption area. The analysis shows that this high fill-factor SOI diode uncooled IR focal plane array can be made without failure of structure breakdown or buckling. The design shows that the sensitivity is of 7.75 × 10？3 V K？1, and the NETD is of 42 mK (f/1.0, 30Hz) which can be achieved in a 35 μm × 35 μm micromachined structure. |
| 英文摘要: | |
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