| 论文编号: | 172511O120130038 |
| 第一作者所在部门: | |
| 论文题目: | Ku-band high power internally matched GaN HEMTs with 1.5GHz bandwidth |
| 论文题目英文: | |
| 作者: | 刘新宇 |
| 论文出处: | |
| 刊物名称: | Microelectronics International |
| 年: | 2013-01-01 |
| 卷: | 31 |
| 期: | 1 |
| 页: | 19 |
| 联系作者: | 刘新宇 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Purpose – The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost-effective lossless compensated matching technique. Design/methodology/approach – Two 4mm gate periphery GaN HEMTs are parallel combined and internally matched with multi-section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain. Findings – With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2 t 0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz. Originality/value – This paper provides useful information for the internally matched GaN HEMTs. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | |
科研产出