Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier--中国科学院微电子研究所

科研产出

当前位置首页科研工作科研产出论文

论文编号:	172511O120130037
第一作者所在部门:
论文题目:	Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier
论文题目英文:
作者:	刘新宇
论文出处:
刊物名称:	Applied Physics Express
年:	2013-06-01
卷:
期:	6
页:	051201-1
联系作者:	刘新宇
收录类别:
影响因子:
摘要:	An ultrathin AlN layer is inserted between the GaN channel and buffer in the fabrication of deep-submicrometer AlGaN/GaN high-electron-mobility transistors (HEMTs). The wide bandgap of AlN establishes a high back barrier and thus enhances the confinement of two-dimensional electron gas under high drain bias voltages. Owning to the effective suppression of short-channel effects in the device with a highly scaled gate length, the fabricated AlN back barrier HEMTs show better pinch-off quality, lower subthreshold current, lower drain-induced barrier lowering factor, and better high-frequency response than the reference device without an AlN back barrier.
英文摘要:
外单位作者单位:
备注: