| 论文编号: | 1725110120160284 |
| 第一作者所在部门: | |
| 论文题目: | Complexity of the Total Dose Radiation Response of Fully Depleted Silicon On Insulator NMOSFETs |
| 论文题目英文: | |
| 作者: | 郑中山 |
| 论文出处: | |
| 刊物名称: | International Conference on Solid-State and Integrated Circuit Technology |
| 年: | 2016 |
| 卷: | |
| 期: | 2 |
| 页: | 12 |
| 联系作者: | 郑中山 |
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| 英文摘要: | |
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