| 论文编号: | 1725110120160253 |
| 第一作者所在部门: | |
| 论文题目: | Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device |
| 论文题目英文: | |
| 作者: | 徐秋霞 |
| 论文出处: | |
| 刊物名称: | Solid-State Electronics |
| 年: | 2016 |
| 卷: | |
| 期: | 115 |
| 页: | 26 |
| 联系作者: | 徐秋霞 |
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| 摘要: | |
| 英文摘要: | |
| 外单位作者单位: | |
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科研产出