| 论文编号: | 1725110120160241 |
| 第一作者所在部门: | |
| 论文题目: | Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate |
| 论文题目英文: | |
| 作者: | 陆江 |
| 论文出处: | |
| 刊物名称: | radiation effects on components & systems conference |
| 年: | 2016 |
| 卷: | |
| 期: | 2 |
| 页: | 12 |
| 联系作者: | 陆江 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | |
科研产出