| 论文编号: | 1725110120160168 |
| 第一作者所在部门: | |
| 论文题目: | Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures |
| 论文题目英文: | |
| 作者: | 彭朝阳 |
| 论文出处: | |
| 刊物名称: | Microelectronics Reliability |
| 年: | 2016 |
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| 期: | 58 |
| 页: | 192 |
| 联系作者: | 申华军,刘可安,白云 |
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| 英文摘要: | |
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