教育背景
2009-2014 北京科技大学/美国明尼苏达大学联合培养 博士
2004-2008 北京科技大学 本科
工作简历
2018-至今 中国科学院微电子研究所 副研究员、博导
2014-2018 中国科学院半导体研究所 博后、助理研究员
新型磁随机存储器开发及其产业化应用、新型存储器件、存算一体
1.北京市科技新星 人才项目
2.国家重大科技专项 晶圆器件测试
3.国家重点研发计划课题 基于存内计算机制的高能效推断训练电路设计
4.国家自然科学基金青年 利用电学方法调控CoNi纳米器件磁化翻转的研究
5.北京科技新星交叉项目 量子启发式自旋存算一体系统
6.中国科学院微电子所 青苗计划C类 磁电存储器器件及集成研究
1. Meiyin Yang*, Lei Zhao, Ruipeng Shi, Bowen Yang, Zhuangzhuang Ye, Zizhao Li, Jingsong Huang, Bao Zhang, Jianfeng Gao, Yanru Li, Peiyue Yu, Shuaiyu Gong, Yan Cui, Xiaolei Yang, Ming Wang, Shikun He, Kaiming Cai*, Jun Luo*. Parallel writing of magnetic tunnel junctions by electrical control of interlayer magnetic coupling. npj Spintronics. 2026, 4 (1) 1.
2. Peiyue Yu, Meiyin Yang*, Yanru Li, Shuo Xu, Ying Li, Shuaiyu Gong, Jingsong Huang, Jianfeng Gao, Weibing Liu, Shasha Wang, Lei Zhao, Enlong Liu, Wenlong Yang, Yang Gao, Shikun He, Dashan Shang, Jun Luo*. Field-free spin-orbit torque switching enabled by controllable domain wall chirality. Materials Futures. 2026, 5 (3) 035201.
3. Peiyue Yu, Shuo Xu, Yanru Li*, Jingsong Huang, Shuaiyu Gong, Jianfeng Gao, Jinbiao Liu, Meiyin Yang*, Jun Luo. Sub-100-nm multistate spin-orbit torque magnetic tunnel junction enabled by local perpendicular anisotropy gradient. Applied Physics Letters. 2026, 128 (14) 142403.
4. Shuaiyu Gong, Yanru Li, Xiaopeng Li, Shuo Xu, Xiaoyu Dou, Ying Li, Jianfeng Gao, Weibing Liu, Peiyue Yu, Jingsong Huang, Jixuan Wu*, Meiyin Yang*, Dashan Shang, Jiezhi Chen, Jun Luo*. Voltage-Driven HZO/Pt-nanocluster-based Magnetoelectric Devices with Low Thermal-Budget (400°C) and Ultra-Low Energy Consumption (0.46pJ/μm2). In 2025 IEEE International Electron Devices Meeting (IEDM). 2025, 1-4.
5. Meiyin Yang, Yan Cui, Jingsheng Chen, Jun Luo*. Materials, processes, devices and applications of magnetoresistive random access memory. International Journal of Extreme Manufacturing. 2025, 7 (1) 012010.
6. Meiyin Yang, Lei Zhao, Bowen Yang, Bowen Shen, Yanru Li, Peiyue Yu, Jianfeng Gao, Ruipeng Shi, Zhuangzhuang Ye, Shuo Xu, Yan Cui, Xiaolei Yang, Ming Wang, Shikun He, Kaiming Cai, Jun Luo*. A Novel Transistor Free Design of SOT-MRAM Written by Unipolar Current with Record Bit Cell Size (15F2). In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2025, 1-3.
7. Yanru Li, Bowen Shen, Meiyin Yang*, Guoqiang Yu, Baoshan Cui, Peiyue Yu, Shuaiyu Gong, Jianfeng Gao, Jinbiao Liu, Jun Luo*. Field-free magnetization switching of synthetic antiferromagnets magnetic tunnel junction induced by spatially gradient spin texture. Applied Physics Letters. 2025, 127 (18) 182408.
8. Shuo Xu, Meiyin Yang*, Yanru Li*, Bowen Shen, Shuaiyu Gong, Jingsong Huang, Peiyue Yu, Ying Li, Jun Luo. Spin symmetry study in non-collinear CrSe: Odd-wave magnetism induced by glide mirror symmetry breaking. Applied Physics Letters. 2025, 127 (3) 032407.
9. Bowen Yang, Fei Wang, Dashan Shang, Meiyin Yang*, Lei Zhao, Woyu Zhang, Zhi Li, Bowen Shen, Jianfeng Gao, Bingjun Yang, Yue Lei, Chao Zuo, Jun Luo. Spin-orbit torque magnetic tunnel junctions with stochastic switching for temporal signal recognition. Journal of Magnetism and Magnetic Materials. 2025, 634 (15) 173535.
10. Yanru Li, Meiyin Yang*, Guoqiang Yu, Baoshan Cui, Jinbiao Liu, Yongliang Li, Qiming Shao, Jun Luo*. XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface. Rare Metals. 2024, 43 (8) 3868.
11. Shuaiyu Gong, Meiyin Yang*, Yanru Li, Bowen Shen, Yongliang Li, Peiyue Yu, Yan Cui, Jun Luo*. Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure. IEEE Electron Device Letters. 2024, 45 (5) 821.
12. Bowen Shen, Meiyin Yang*, Yanru Li, Peiyue Yu, Jianfeng Gao, Baoshan Cui, Guoqiang Yu, Jun Luo*. Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation. Applied Physics Letters. 2024, 124 (1) 012401.
13. Lei Zhao, Meiyin Yang*, Jianfeng Gao, Tengzhi Yang, Yan Cui, Jing Xu, Junfeng Li, Qingyi Xiang, Wenjing Li, Feilong Luo, Li Ye, and Jun Luo*. Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process. IEEE Electron Device Letters. 2023, 44 (3) 408.
14. Yongkang Zhao#, Junlin Wang#, Lianxin Xu, Peiyue Yu, Mingxuan Hou, Fei Meng, Shuai Xie,Yufei Meng, Ronggui Zhu, Zhipeng Hou*, Meiyin Yang*, Jun Luo, Jing Wu, Yongbing Xu, Xingsen Gao, Chun Feng*, Guanghua Yu. Local Manipulation of Skyrmion Nucleation in Microscale Areas of a Thin Film with Nitrogen-Ion Implantation. ACS Applied Materials & Interfaces. 2023 15 (11) 15004.
15. Xiaolei Wang*, Shuainan Cui, Meiyin Yang*, Lei Zhao, Bi Tan, Tao Liu, Guangcheng Wang, Jinxiang Deng, Jun Luo*. Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation. Nanotechnology. 2023, 34 (31) 315702.
16. Peiyue Yu, Lei Zhao, Jianfeng Gao, Wenwu Wang, Jun Luo, Meiyin Yang*. Annealing effect on the magneto-electric properties of SOT-MTJs from micro to nano-sized dimensions. Japanese Journal of Applied Physical. 2023, 62 (SH) SH1004.
17. Lei Zhao, Meiyin Yang*, Jianfeng Gao, Tengzhi Yang, Yan Cui, Jing Xu, Junfeng Li, Bingjun Yang, Lei Yue, Chao Zuo, Jun Luo*. Spin Logic Operated by Unipolar Voltage Inputs. IEEE Electron Device Letters. 2022, 43 (8) 1239.
18. Tengzhi Yang, Meiyin Yang*, Lei Zhao, Jianfeng Gao, Qingyi Xiang, Wenjing Li, Feilong Luo, Li Ye, Jun Luo*. Field-Free Deterministic Writing of Spin-orbit Torque Magnetic Tunneling Junction by Unipolar Current. IEEE Electron Device Letters. 2022, 43 (5) 709.
19. Yanru Li, Meiyin Yang*, Guoqiang Yu, Baoshan Cui, Jun Luo*. Current controlled non-hysteresis magnetic switching in the absence of magnetic field. Applied Physics Letters. 2022, 120 (6) 062402.
20. Meiyin Yang, Yanru Li, Jun Luo*, Yongcheng Deng, Nan Zhang, Xueying Zhang, Shaoxin Li, Yan Cui, Peiyue Yu, Tengzhi Yang, Yu Sheng, Sumei Wang, Jing Xu, Chao Zhao and Kaiyou Wang*. All-linear multistate magnetic switching induced by electrical current. Physical Review Applied. 2021, 15(5) 054013.
入选中国科学院青年创新促进会会员
人才队伍