| 论文题目 | 作者 | 刊物名称 | 发表年度 |
|---|---|---|---|
| SOI Technology for Radio-FrequencyIntegrated-Circuit Applications | Rong Yang, Associate Member, IEEE, He Qian, Junfeng Li, Qiuxia Xu, Senior Member, IEEE,Chaohe Hai, and Zhengsheng Han; | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006 |
| 提高SOI器件和电路性能的研究 | 海潮和,韩郑生,周小茵,赵立新,李多力,毕津顺; | 《半导体学报》 | 2006 |
| A Short-Channel SOI RF Power LDMOS Technology With TiSi2 Salicide on Dual Sidewalls With Cutoff Frequency fT ～ 19.3 GHz | Rong Yang, J. F. Li, H. Qian, G. Q. Lo, N. Balasubramanian, and D. L. Kwong; | IEEE ELECTRON DEVICE LETTERS | 2006 |
| 具有应变沟道及EOT 1.2nm高性能栅长22nm CMOS器件 | 徐秋霞,钱鹤,段晓峰,刘海华,王大海,韩郑生,刘明,陈宝钦,李海欧; | 《半导体学报》 | 2006 |
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