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论文题目	作者	刊物名称	发表年度
Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k /metal gate last process	王艳蓉;	Chinese Physics B	2015
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process	任尚清;	Journal of Semiconductors	2015
Energy distribution extraction of negative charges responsible for positive bias temperature instability	任尚清;	Chinese Physics B	2015
基于40nm CMOS工艺的DAC IP核物理与时序建模	王东; 陈岚;柳臻朝;冯燕	微电子学与计算机	2015
Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process	祁路伟;	Chinese Physics B	2015
Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications	; 许高博;周华杰;钟健;徐唯佳;赵超;陈大鹏;叶甜春;朱慧珑;梁擎擎;刘金彪;李俊峰;项金娟;许淼	IEEE TRANSACTIONS ON ELECTRON DEVICES	2015
Effect of process parameters on sidewall damage in deep silicon etch	; 闫江	Journal of Micromechanics and Microengineering	2015
A straightforward and CMOS-compatible nanofabrication technique of periodic SiO2 nanohole arrays	; 贺晓彬;高建峰;李俊杰;韦亚一;闫江	Nanotechnology	2015
CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask	; 高建峰;贺晓彬;李俊杰;韦亚一;闫江	Nanoscale Research Letters	2015
Hydroxyl-free buffered dielectric for grapheme field-effect transistors	; 麻芃;王少青;彭松昂;张大勇;史敬元	carbon	2015
Short channel effect of AlGaN/GaN HEMT with a super-lattice barrier layer	; 刘果果;王鑫华;刘新宇	CSW2015	2015
AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation	; 李艳奎刘果果;黄森;王鑫华;庞磊;郑英奎	Chinese Physics B	2015
一种基于定位误差的多星座快速选星算法	; 巴晓辉;刘海洋;鲁郁;陈杰	科学技术与工程	2015
互相关干扰下微弱GPS信号检测方法	; 巴晓辉;陈杰	数据采集与处理	2015
卫星导航信号模拟器的软件实现	; 罗士栋	卫星导航定位与北斗系统应用	2015