当前位置 >>  首页 >> 科研工作 >> 科研产出 >> 论文

论文

论文题目 作者 刊物名称 发表年度
逆阻型绝缘栅双极晶体管研究进展 张广银; 半导体技术 2016
SURFACE PHOTOVOLTAGE STUDIES OF N-TYPE AND P-TYPE CRYSTALLINE SILICON PASSIVATEDBY THERMAL-ALD ALUMINIUM OXIDE 孙昀; EUPVSEC Proceedings 2016
DOPED A-SI:H/μC-SI:H HYBRID LAYERS USED TO IMPROVE THE PERFORMANCE OF TOP-CONSILICON SOLAR CELLS 陶科; EUPVSEC Proceedings 2016
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures 彭朝阳; Microelectronics Reliability 2016
Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment 彭朝阳; Materials Science Forum 2016
3 300 V高压4H-SiC结势垒肖特基二极管器件的研制 彭朝阳; 大功率变流技术 2016
IGBT感性负载关断下电压变化率的建模与仿真研究 谭骥; 物理学报 2016
Theoretical Modification of the Negative Miller Capacitance during the Switching Transients of IGBTs 滕渊; 半导体学报 2016
基于频率补偿的窄脉冲量子级联激光器快速驱动技术 余兆安; 红外与激光工程 2016
Current transportation enhancement with ZnO nanoroads for silicon nanowire solar cell ; IEEE PVSC 2016
A coupling modulation model of capillary waves from gravity waves: Theoretical analysisandexperimental validation ; Journal of Geophysical Research 2016
Analysis on the filament structure evolution in reset transition of Cu/HfO2/Pt RRAM device 张美芸; Nanoscale Research Letters 2016
Research progresses of resistive random access memory 龙世兵; Sci Sin-Phys Mech Astron 2016
The Statistics of Set Time of Oxide-based Resistive Switching Memory 张美芸; Physical and Failure Analysis of Integrated Circuits (IPFA), 2016 IEEE 23rd International Symposium on the 2016
Current compliance impact on the instability of HfO2-based RRAM devices 张美芸; IEEE Silicon Nanoelectronics Workshop 2016 2016